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CHURCHILL et al. in popularity. Our work was done in the high-dose range, and a dynamic equilibrium model was proposed (90, 93, 94) that provided a degree of success in reproducing the general shape of the Vfbversus V,,(D) curves over a substantial range of both positive and negative values of gate bias. Generally speaking, all of the simple models fall into one or the other of two main categories. One category is that of dynamic equilibrium models. The other is that of models based on the capture of mobile carriers as they sweep across the insulator under the influence of the applied electric field.

5, one is forced to formulate unique models for various convenient separate combinations of the 27 different cases. Only three dimensions have been shown in Fig. 5 . When other important physical mechanisms are considered as well, the three-dimensional figure becomes a multidimensional block and the total number of possibilities becomes enormous. Obviously, we do not expect to readily find a simple model which is able to simultaneously treat a much larger number of possibilities. One must often be content with simple models that provide fast, reasonably accurate results with minimal effort.

For our present purposes we will define the three ranges roughly as follows. A . Low-Dose Range The low-dose range covers the range of values of cumulative dose over which no appreciable amount of flat-band shift is detected. Of course, under actual experimental circumstances, some small but nonnegligible amount of shift must usually be present in order to determine that some radiation-induced changes have in fact occurred. Therefore we can only apply this definition in the broadest sense. However, in practice, irradiation has actually been terminated at the point where a nonnegligible flat-band shift was first detected (76).

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